- 您现在的位置：买卖IC网 > Sheet目录526 > SUD50N06-09L-E3 (Vishay Siliconix)MOSFET N-CH D-S 60V TO252
SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
100
80
60
40
20
V GS = 10 thru 5 V
4V
100
80
60
40
20
T C = 125 °C
25 °C
0
2 V, 3 V
0
- 55 °C
0
2
4
6
8
10
0
1
2
3
4
5
120
100
80
V DS - Drain-to-Source Voltage (V)
Output Characteristics
T C = - 55 °C
25 °C
0.015
0.012
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V GS = 4.5 V
60
40
125 °C
0.009
0.006
V GS = 10 V
20
0
0.003
0.000
0
10
20 30
40
50
0
20
40
60
80
100
4000
I D - Drain Current (A)
Transconductance
10
I D - Drain Current (A)
On-Resistance vs. Drain Current
3500
3000
2500
2000
1500
1000
500
C oss
C iss
8
6
4
2
V DS = 30 V
I D = 50 A
0
C rss
0
0
10
20 30 40 50
60
0
10
20
30
40
50
V DS - Drain-to-Source Voltage (V)
Capacitance
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SUD50N10-18P-GE3
MOSFET N-CH 100V DPAK
SUD50N10-34P-T4-E3
MOSFET N-CH D-S 100V TO252
SUD50NP04-77P-T4E3
MOSFET N/P-CH 40V TO252-4
SUD50P04-13L-E3
MOSFET P-CH D-S 40V TO252
SUD50P04-23-E3
MOSFET P-CH D-S 40V TO252
SUD50P04-40P-T4-E3
MOSFET P-CH D-S 40V TO252
SUD50P06-15L-T4-E3
MOSFET P-CH D-S 60V TO252
SUD50P08-26-E3
MOSFET P-CH D-S 80V TO252
相关代理商/技术参数
SUD50N06-09L-E3
制造商:Vishay Siliconix 功能描述:MOSFET
SUD50N06-12
制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 63A 3-Pin(2+Tab) DPAK
SUD50N06-12-E3
制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 63A 3-Pin(2+Tab) DPAK
SUD50N06-16
制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK
SUD50N06-16-E3
制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK
SUD50N06-36
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S), 150 °C MOSFET
SUD50N06-36-E3
制造商:Vishay Semiconductors 功能描述:
SUD50N06-36-T4-E3
功能描述:MOSFET 60V 12A 24W 36mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube